Scheda tecnica SQD100N04-3M6 di Vishay Siliconix

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SQD100N04-3m6
www.vishay.com Vishay Siliconix
S12-2943-Rev. A, 10-Dec-12 1Document Number: 63836
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
® Power MOSFET
• Package with Low Thermal Resistance
•100 % R
g and UIS Tested
• AEC-Q101 Qualifiedd
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () at VGS = 10 V 0.0036
ID (A) 100
Configuration Single
TO-252
Drain Connected to Tab
Top View
GDS
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package TO-252
Lead (Pb)-free and Halogen-free SQD100N04-3m6-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °Ca
ID
100
A
TC = 125 °C 76
Continuous Source Current (Diode Conduction)aIS100
Pulsed Drain CurrentbIDM 400
Single Pulse Avalanche Current L = 0.1 mH IAS 62
Single Pulse Avalanche Energy EAS 192 mJ
Maximum Power DissipationbTC = 25 °C PD
136 W
TC = 125 °C 45
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB MountcRthJA 50 °C/W
Junction-to-Case (Drain) RthJC 1.1
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SQD100N04-3m6
www.vishay.com Vishay Siliconix
S12-2943-Rev. A, 10-Dec-12 2Document Number: 63836
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 40 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 - 3.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 40 V - - 1
μA VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150
On-State Drain Currenta I
D(on) V
GS = 10 V VDS5 V 50 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = 10 V ID = 20 A - 0.0030 0.0036
VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0063
VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0076
Forward Transconductancebgfs VDS = 15 V, ID = 15 A - 120 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 5360 6700
pF Output Capacitance Coss - 500 627
Reverse Transfer Capacitance Crss - 250 310
Total Gate ChargecQg
VGS = 10 V VDS = 20 V, ID = 50 A
- 70 105
nC Gate-Source ChargecQgs -16-
Gate-Drain ChargecQgd -13-
Gate Resistance Rgf = 1 MHz 0.9 1.86 2.8
Turn-On Delay Timectd(on)
VDD = 20 V, RL = 0.4
ID 50 A, VGEN = 10 V, Rg = 1
-1116
ns
Rise Timectr -58
Turn-Off Delay Timectd(off) -3451
Fall Timectf -914
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM - - 400 A
Forward Voltage VSD IF = 30 A, VGS = 0 V - 0.9 1.5 V
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SQD100N04-3m6
www.vishay.com Vishay Siliconix
S12-2943-Rev. A, 10-Dec-12 3Document Number: 63836
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0 3 6 9 12 15
VGS =10Vthru5V
VGS =4V
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
0
70
140
210
280
350
0 1428425670
ID- Drain Current (A)
- Transconductance (S)
gfs
TC= 125 °C
TC= 25 °C
TC= - 55 °C
Crss
0
1000
2000
3000
4000
5000
6000
7000
010203040
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
20
40
60
80
100
0246810
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
0
0.002
0.004
0.006
0.008
0.010
0 20406080100
VGS =10V
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0 102030405060708090
I
D
=50A
V
DS
=20V
Qg - Total Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
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SQD100N04-3m6
www.vishay.com Vishay Siliconix
S12-2943-Rev. A, 10-Dec-12 4Document Number: 63836
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
ID=20A VGS =10V
VGS =6V
TJ - Junction Temperature (°C)
(Normalized)RDS(on) - On-Resistance
0
0.01
0.02
0.03
0246810
TJ= 25 °C
TJ= 150 °C
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
- 1.8
- 1.3
- 0.8
- 0.3
0.2
0.7
- 50 - 25 0 25 50 75 100 125 150 175
ID=5mA
ID= 250 μA
VGS(th) Variance (V)
TJ - Temperature (°C)
42
44
46
48
50
52
54
- 50 - 25 0 25 50 75 100 125 150 175
ID=10mA
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
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SQD100N04-3m6
www.vishay.com Vishay Siliconix
S12-2943-Rev. A, 10-Dec-12 5Document Number: 63836
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Limited by R
DS(on)
*
1 ms
IDM Limited
TC = 25 °C
Single Pulse
BVDSS Limited
100 μs
10 ms, 100 ms, 1 s, 10 s, DC
ID Limited
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 10
Normalized Effective Transient
Thermal Impedance
1000
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1001
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SQD100N04-3m6
www.vishay.com Vishay Siliconix
S12-2943-Rev. A, 10-Dec-12 6Document Number: 63836
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63836.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10 -4 10 -3 10 -2 10 -1 10
Normalized Effective Transient
Thermal Impedance
100
0.2
0.1
Duty Cycle = 0.5
1
0.05
0.02
Single Pulse
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Package Information
www.vishay.com Vishay Siliconix
Revision: 02-Sep-13 1Document Number: 64424
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-252AA Case Outline
Note
• Dimension L3 is for reference only.
L3
D
L4
L5
bb2
e1
E1
D1
C
A1
gage plane height (0.5 mm)
e
b3
E
C2
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
— VISHAY.. RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0 22A (5 590} n 420 110.668) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} Docq'vve'n Number 72594 'SHa) com 3
Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
Return to Index
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Revision: 09-Jul-2021 1Document Number: 91000
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