1Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 40 V
IF(AV) Average forward current, δ = 0.5, square
wave
SMB TL = 130 °C
2 ASMB Flat TL = 140 °C
SMA Flat, SMA Flat Notch TL = 130 °C
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 158 W
Tstg Storage temperature range -65 to +150 °C
TjMaximum operating junction temperature(1) +150 °C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol Parameter Max. value Unit
Rth(j-l) Junction to lead
SMB 20
°C/W
SMB Flat 10
SMA Flat 20
SMA Flat Notch 20
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
VR = 40 V
- 220 µA
Tj = 100 °C - 20 mA
Tj = 125 °C - 38 80 mA
VF(1) Forward voltage drop
Tj = 25 °C
IF = 1 A
- 0.39
V
Tj = 125 °C - 0.25 0.28
Tj = 25 °C
IF = 2 A
- 0.43
Tj = 125 °C - 0.31 0.34
Tj = 25 °C
IF = 4 A
- 0.50
Tj = 125 °C - 0.39 0.45
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.22 x IF(AV) + 0.06 x IF2(RMS)
STPS2L40
Characteristics
DS2146 - Rev 6 page 2/17