Scheda tecnica SI9407BDY di Vishay Siliconix

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Si9407BDY
www.vishay.com Vishay Siliconix
S09-0704-Rev. B, 27-Apr-09 1Document Number: 69902
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 60 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
• 100 % UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 85 °C/W
PRODUCT SUMMARY
VDS (V) -60
RDS(on) max. () at VGS = -10 V 0.120
RDS(on) max. () at VGS = -4.5 V 0.150
Qg typ. (nC) 8
ID (A) a-4.7
Configuration Single
Top View
SO-8 Single
1
S
2
S
3
S
1
2
S
3
S
4
G
D
7
D
6
D
5
D
8
Available
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free Si9407BDY-T1-E3
Lead (Pb)-free and halogen-free Si9407BDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -60 V
Gate-source voltage VGS ± 20
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
-4.7
A
TC = 70 °C -3.8
TA = 25 °C -3.2 b, c
TA = 70 °C -2.6 b, c
Pulsed drain current (10 μs width) IDM -20
Continuous source-drain diode current TC = 25 °C IS
-4.2
TA = 25 °C -2 b, c
Avalanche current L = 0.1 mH IAS -15
Single-pulse avalanche energy EAS 11 mJ
Maximum power dissipation
TC = 25 °C
PD
5
W
TC = 70 °C 3.2
TA = 25 °C 2.4 b, c
TA = 70 °C 1.5 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d RthJA 42 53 °C/W
Maximum junction-to-foot (drain) Steady state RthJF 19 25
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Si9407BDY
www.vishay.com Vishay Siliconix
S09-0704-Rev. B, 27-Apr-09 2Document Number: 69902
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -60 - - V
VDS temperature coefficient VDS/TJ ID = -250 μA --50-
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ -4-
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1 - -3 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = -60 V, VGS = 0 V - - -1 μA
VDS = -60 V, VGS = 0 V, TJ = 55 °C - - -10
On-state drain current a ID(on) V
DS -5 V, VGS = -10 V -20 - - A
Drain-source on-state resistance aRDS(on)
VGS = -10 V, ID = -3.2 A - 0.100 0.120
VGS = -4.5 V, ID = -2.9 A - 0.126 0.150
Forward transconductance a gfs VDS = -15 V, ID = -3.2 A - 8.5 - S
Dynamic b
Input capacitance Ciss
VDS = -30 V, VGS = 0 V, f = 1 MHz
- 600 -
pFOutput capacitance Coss -70-
Reverse transfer capacitance Crss -50-
Total gate charge Qg
VDS = -30 V, VGS = -10 V, ID = -3.2 A - 14.5 22
nC
VDS = -30 V, VGS = -4.5 V, ID = -3.9 A
-812
Gate-source charge Qgs -2.2-
Gate-drain charge Qgd -3.7-
Gate resistance Rgf = 1 MHz - 14 -
Turn-on delay time td(on)
VDD = -30 V, RL = 11.5
ID -2.6 A, VGEN = -4.5 V, Rg = 1
-3045
ns
Rise time tr- 70 105
Turn-off delay time td(off) -4060
Fall time tf-3045
Turn-on delay time td(on)
VDD = -30 V, RL = 11.5
ID -2.6 A, VGEN = -10 V, Rg = 1
-1015
ns
Rise time tr-1320
Turn-off delay time td(off) -3555
Fall time tf-3045
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C - - -4.2 A
Pulse diode forward current ISM ---20
Body diode voltage VSD IS = -2 A, VGS = 0 V - -0.8 -1.2 V
Body diode reverse recovery time trr
IF = -2 A, di/dt = -100 A/μs,
TJ = 25 °C
-3050ns
Body diode reverse recovery charge Qrr -3560nC
Reverse recovery fall time ta-16-ns
Reverse recovery rise time tb-14-
— VISHAY. V
Si9407BDY
www.vishay.com Vishay Siliconix
S09-0704-Rev. B, 27-Apr-09 3Document Number: 69902
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
012345
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS =10Vthru5V
VGS =3V
VGS =4V
0
2
4
6
8
10
03691215
ID=3.2A
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
VDS =30V
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
TC= 150 °C
TC= - 55 °C
TC= 25 °C
Crss
0
200
400
600
800
1000
0 102030405060
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
ID=3.2 A
VGS =10V
VGS =4.5V
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Si9407BDY
www.vishay.com Vishay Siliconix
S09-0704-Rev. B, 27-Apr-09 4Document Number: 69902
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ= 150 °C
10
VSD - Source-to-Drain Voltage (V)
- Source Current (A)I S
TJ= 25 °C
1
100
- 0.4
- 0.2
0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
Variance (V)VGS(th)
TJ- Temperature (°C)
0.05
0.10
0.15
0.20
0.25
0.30
246810
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
TA= 25 °C
TA= 125 °C
ID=3.2A
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001 1001
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
1ms
10 ms
1s
10 s
DC
100 µs
BVDSS
Limited
Limited by R
DS(on)
*
100 ms
VISHAY. 50 gmos:echsuggon@wshay.com www.v\shay.com/doc?91000
Si9407BDY
www.vishay.com Vishay Siliconix
S09-0704-Rev. B, 27-Apr-09 5Document Number: 69902
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating aPower Derating
Note
a. The power dissipation PD is based on TJ max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
0
1
2
3
4
5
6
0 25 50 75 100 125 150
TC- Case Temperature (°C)
ID- Drain Current (A)
0
1
2
3
4
5
25 50 75 100 125 150
TC- Case Temperature (°C)
Power Dissipation (W)
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Si9407BDY
www.vishay.com Vishay Siliconix
S09-0704-Rev. B, 27-Apr-09 6Document Number: 69902
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69902.
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
— VISHAYm V HRH |-——-|
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 50-8 0172 (A 359} n 246 (a 248) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) VISHAY» Docmem Number 72606 Re w 2‘ rJaurOB
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 01-Jan-2021 1Document Number: 91000
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