Scheda tecnica 1N5820 - 1N5822 di Vishay General Semiconductor - Diodes Division

VISHAY. ww shay com/doc 99912 RoHS cowmm DwodesAmencas@\/wshay.com DwodesAswamwshaymm DwodesEuvoge®vlshamcom www.v\shay,com/doc?91000
1N5820, 1N5821, 1N5822
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-13 1Document Number: 88526
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Barrier Plastic Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 20 V, 30 V, 40 V
IFSM 80 A
VF0.475 V, 0.500 V, 0.525 V
TJ max. 125 °C
Package DO-201AD
Diode variations Single
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5820 1N5821 1N5822 UNIT
Maximum repetitive peak reverse voltage VRRM 20 30 40 V
Maximum RMS voltage VRMS 14 21 28 V
Maximum DC blocking voltage VDC 20 30 40 V
Non-repetitive peak reverse voltage VRSM 24 36 48 V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length at TL = 95 °C IF(AV) 3.0 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load IFSM 80 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 125 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5820 1N5821 1N5822 UNIT
Maximum instantaneous forward voltage 3.0 VF (1) 0.475 0.500 0.525 V
Maximum instantaneous forward voltage 9.4 VF (1) 0.850 0.900 0.950 V
Maximum average reverse current
at rated DC blocking voltage
TA = 25 °C IR (1) 2.0 mA
TA = 100 °C 20
VISHAY. on DwodesAmencas©wshay£om DwodesAswa@wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
1N5820, 1N5821, 1N5822
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-13 2Document Number: 88526
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to lead vertical PCB mounted, 0.500" (12.7 mm) lead length with 2.5" x 2.5" (63.5 mm x 63.5 mm) copper pad
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5820 1N5821 1N5822 UNIT
Typical thermal resistance RJA (1) 40 °C/W
RJL (1) 10
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5820-E3/54 1.08 54 1400 13" diameter paper tape and reel
1N5820-E3/73 1.08 73 1000 Ammo pack packaging
020 40 60 80 100 120 140
0
1.0
2.0
3.0
4.0
Average Forward Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
110 100
20
30
40
10
70
80
60
50
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
00.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
020 40 60 80 100
0.001
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
VISHAY. DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.com/doc?91000
1N5820, 1N5821, 1N5822
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-13 3Document Number: 88526
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1000
100
10
0.1 110 100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1 110
0.1
10
1
100
100
0
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
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Revision: 01-Jan-2021 1Document Number: 91000
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