Scheda tecnica BYG20D thru BYG20J di Vishay General Semiconductor - Diodes Division

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BYG20D, BYG20G, BYG20J
www.vishay.com Vishay General Semiconductor
Revision: 21-Feb-2020 1Document Number: 88958
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Avalanche SMD Rectifier
ADDITIONAL RESOURCES
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Soft recovery characteristics
• Ultrafast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 200 V, 400 V, 600 V
IFSM 30 A
IR1.0 μA
VF at IF1.4 V
trr 75 ns
ER20 mJ
TJ max. 150 °C
Package SMA (DO-214AC)
Circuit configuration Single
SMA (DO-214AC)
Cathode Anode
3
3
3
D
D
D
3
D
3D Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG20D BYG20G BYG20J UNIT
Device marking code BYG20D BYG20G BYG20J
Maximum repetitive peak reverse voltage VRRM 200 400 600 V
Average forward current IF(AV) 1.5 A
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load IFSM 30 A
Pulse energy in avalanche mode, non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C ER20 mJ
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
VISHAY. an: DwodesAmencasalwshay.com DwodesAslaalwshayLam DwodesEurogeQH/wshay com www wshay,com/doc791000
BYG20D, BYG20G, BYG20J
www.vishay.com Vishay General Semiconductor
Revision: 21-Feb-2020 2Document Number: 88958
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG20D BYG20G BYG20J UNIT
Maximum instantaneous
forward voltage
IF = 1 A TJ = 25 °C VF (1) 1.3 V
IF = 1.5 A 1.4
Maximum DC reverse current VR = VRRM
TJ = 25 °C IR
1µA
TJ = 100 °C 10
Maximum reverse recovery
time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 75 ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG20D BYG20G BYG20J UNIT
Typical thermal resistance, junction to lead, TL = const. RθJL 25 °C/W
Typical thermal resistance, junction to ambient
RθJA (1) 150
°C/WRθJA (2) 125
RθJA (3) 100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG20J-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG20J-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG20JHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel
BYG20JHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel
BYG20J-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG20J-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG20JHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel
BYG20JHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel
VISHAY. an: DwodesAmencasfilvwshay.com DwodesAslafilvwshayLam DwodesEumge®vwshay com www wshay,com/doc791000
BYG20D, BYG20G, BYG20J
www.vishay.com Vishay General Semiconductor
Revision: 21-Feb-2020 3Document Number: 88958
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Reverse Recovery Time vs. Forward Current
10
100
1000
10000
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.0 2.5 3.0
Axis Title
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ= -40 °C
TJ= 25 °C
TJ= 150 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100806040200 120 140 160
Ambient Temperature (°C)
Average Forward Current (A)
V
R
= V
RRM
Half Sine-Wave
R
θJA
≤ 25 K/W
R
θJA
≤ 125 K/W
R
θJA
≤ 150 K/W
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
0
10
20
30
40
70
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 80 % V
R
50
60
0
5
10
15
20
25
30
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
0 0.2 0.4 0.6 0.8
0
100
200
300
400
600
1.0
500
IR = 0.5 A, iR = 0.125 A
Reverse Recovery Time (ns)
Forward Current (A)
TA = 125 °C
TA = 100 °C
TA = 75 °C
TA = 25 °C
TA = 50 °C
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BYG20D, BYG20G, BYG20J
www.vishay.com Vishay General Semiconductor
Revision: 21-Feb-2020 4Document Number: 88958
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Reverse Recovery Charge vs. Forward Current Fig. 8 - Thermal Response
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0
50
100
150
200
0 0.2 0.4 0.6 0.81.0
Reverse Recovery Charge (nC)
Forward Current (A)
I
R
= 0.5 A, i
R
= 0.125 A
T
A
= 125 °C
T
A
= 100 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= 50 °C
1
10
100
1000
Thermal Resistance for Pulse Cond. (K/W)
Pulse Length (s)
10-5 10-4 10-3 10-2 10-1 100101102
Single Pulse
125 K/W DC
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.02
t
p
/T = 0.05
t
p
/T = 0.01
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
SMA (DO-214AC)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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