Scheda tecnica STx28NM50N di STMicroelectronics

June 2011 Doc ID 17432 Rev 2 1/21
21
STB28NM50N, STF28NM50N
STP28NM50N, STW28NM50N
N-channel 500 V, 0.135 , 21 A D²PAK, TO-220, TO-220FP, TO-247
MDmesh™ II Power MOSFET
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
Order codes VDSS
(@Tjmax)
RDS(on)
max. ID
STB28NM50N
550 V < 0.158 21 A
STF28NM50N
STP28NM50N
STW28NM50N
12
3
123
TO-220FP TO-220
1
3
D²PAK
123
TO-247
!-V
$
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STB28NM50N
28NM50N
D²PAK Tape and reel
STF28NM50N TO-220FP
Tu b eSTP28NM50N TO-220
STW28NM50N TO-247
www.st.com
Contents STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
2/21 Doc ID 17432 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Electrical ratings
Doc ID 17432 Rev 2 3/21
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 D²PAK TO-247 TO-220FP
VDS Drain-source voltage (VGS = 0) 500 V
VGS Gate- source voltage ± 25 V
ID
Drain current (continuous) at
TC = 25 °C 21 21 (1)
1. Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at
TC = 100 °C 13 13 (1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 84 84 (1) A
PTOT Total dissipation at TC = 25 °C 150 35 W
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;TC=25 °C)
2500 V
dv/dt (3)
3. ISD 21 A, di/dt 400 A/µs, VDS peak V(BR)DSS, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature - 55 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 D²PAK TO-247 TO-220FP
Rthj-case Thermal resistance junction-case max 0.83 3.6 °C/W
Rthj-amb
Thermal resistance junction-ambient
max 62.5 50 62.5 °C/W
Rthj-pcb(1)
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max 30 °C/W
Tl
Maximum lead temperature for
soldering purpose 300 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max) 7.5 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 300 mJ
Electrical characteristics STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
4/21 Doc ID 17432 Rev 2
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 500 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating, @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 25 V 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 10.5 A 0.135 0.158
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 -
1735
122
4.3
-
pF
pF
pF
Coss(eq)(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Equivalent output
capacitance time related VGS = 0, VDS = 0 to 50 V - 418 - pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 21 A,
VGS = 10 V,
(see Figure 19)
-
50
9.5
25
-
nC
nC
nC
RgGate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-2.7-
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Electrical characteristics
Doc ID 17432 Rev 2 5/21
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 10.5 A
RG=4.7 VGS = 10 V
(see Figure 18)
-
13.6
19
62
52
-
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -21
84
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 21 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 400 V
(see Figure 23)
-
326
5
30
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 400 V, Tj = 150 °C
(see Figure 23)
-
376
6.2
33.2
ns
µC
A
mam 10" em SINGLE PULSE m” 4 10'5 to" to to" to"~,(s) mum K to" 0.05 0.02 0.01 1072 S‘NGLE PULSE 5L m" to" 10'3 ‘0’: 10" to” as) K mum to“ 20‘: k Rm... ‘0_‘ kip/1— m, m 0.01 “L SINGLE PULSE u)" to’5 10" m" 10’1 10"+,(s)
Electrical characteristics STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
6/21 Doc ID 17432 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220,
D²PAK
Figure 3. Thermal impedance for TO-220,
D²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
)$


  6$36

!
/PERATIONINTHISAREAIS
,IMITEDBYMAX2
$3ON
S
S
MS
MS
4J#
4C#
3INGLE
PULSE
 !-V
)$


  6$36

!
/PERATIONINTHISAREAIS
,IMITEDBYMAX2
$3ON
S
S
MS
MS
4J#
4C#
3INGLE
PULSE
 !-V
)$


  6$36

!
/PERATIONINTHISAREAIS
,IMITEDBYMAX2
$3ON
S
S
MS
MS
4J#
4C#
3INGLE
PULSE
 !-V
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Electrical characteristics
Doc ID 17432 Rev 2 7/21
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations Figure 13. Output capacitance stored energy
)$



 6$36

!
 


6
6
6'36

!-V
)$



6'36
!



6$36
!-V
6'3
 1GN#
6

 

6$$6
)$!







6$3 6'3




!-V
2$3ON



  )$!
/HM




6'36
    

!-V
#



  6$36
P&

#ISS
#OSS
#RSS
!-V
%OSS
 6$36
*

 


!-V
\\
Electrical characteristics STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
8/21 Doc ID 17432 Rev 2
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Normalized BVDSS vs temperature Figure 17. Source-drain diode forward
characteristics
6'3TH




 4*#
NORM



  
!-V
)$!
2$3ON




 4*#
NORM
 
  




 )$!
6'36
!-V
"6$33
 4*#
NORM
 
  








)$M!
!-V V
SD
010 I
SD
(A)
(V)
515 20
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
=25°C
T
J
=150°C
T
J
=-50°C
AM09090v1
l :1 1" Amman 1 VDD Figure 20. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped induc circuii . A P , r: -E 57 ‘ u; Lo; 2552 D 7 3 AS} ’ woman Van Figure 22. Unclamped inductive waveform Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Test circuits
Doc ID 17432 Rev 2 9/21
3 Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47k1k
47k
2.7k
1k
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
10/21 Doc ID 17432 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Package mechanical data
Doc ID 17432 Rev 2 11/21
Figure 24. TO-220FP drawing
Table 9. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
Package mechanical data STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
12/21 Doc ID 17432 Rev 2
Table 10. D²PAK (TO-263) mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0°
mummy A1 ‘
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Package mechanical data
Doc ID 17432 Rev 2 13/21
Figure 25. D²PAK footprint(a)
Figure 26. D²PAK (TO-263) drawing
a. All dimension are in millimeters
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
0079457_S
Package mechanical data STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
14/21 Doc ID 17432 Rev 2
Table 11. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
P 3.75 3.85
Q 2.65 2.95
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Package mechanical data
Doc ID 17432 Rev 2 15/21
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Package mechanical data STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
16/21 Doc ID 17432 Rev 2
Table 12. TO-247 mechanical data
Dim.
mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
P 3.55 3.65
R 4.50 5.50
S5.50
WE ng” 4 s i
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Package mechanical data
Doc ID 17432 Rev 2 17/21
Figure 28. TO-247 drawing
0075325_F
Packaging mechanical data STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
18/21 Doc ID 17432 Rev 2
5 Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
Eendmg radms User dwedm m ma Figure 30. Reel 40mm min, Access hole A A1 sl at \ocauan B \ 7 °\ c 7 , A _ \ 7 _ \ le mums G measu v Doc ID 17432 Rev 2
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Packaging mechanical data
Doc ID 17432 Rev 2 19/21
Figure 29. Tape
Figure 30. Reel
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
20/21 Doc ID 17432 Rev 2
6 Revision history
Table 14. Document revision history
Date Revision Changes
19-Jul-2010 1 First release.
27-Jun-2011 2 Updated Table 6: Dynamic.
Updated Section 2.1: Electrical characteristics (curves).
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Doc ID 17432 Rev 2 21/21
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com