l TEXAS
INSTRUMENTS
TPS2492
TPS2493
SLUSA65C –JULY 2010–REVISED JANUARY 2013
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
9 V ≤VVCC ≤80 V, -40°C ≤TJ≤125°C, VTIMER = 0 V and all outputs unloaded. Typical specification are at TJ= 25°C, VVCC =
48 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Gate Drive Output (GATE)
GATE sourcing current VSENSE = VVCC; V(GATE-OUT) = 7 V; VUVEN = Hi 15 22 35 µA
VUVEN = Lo; VGATE = VVCC 1.8 2.4 2.8
IGATE GATE sinking current mA
VUVEN = Hi; VGATE = VVCC; VVCC- VSENSE =75 125 250
200 mV
VUVEN = Hi, VCC = SENSE = OUT, measure
VGATE GATE output 12 16 V
VGATE -VOUT
Propagation delay: UVEN going VUVEN = 0 →2.5 V, 50% of VUVEN to 50% of
tD_ON 25 40
high to GATE output high VGATE, VOUT = VVCC, R(GATE-OUT) = 1 MΩ
VUVEN = 2.5 V →0 V, 50% of VUVEN to 50%
Propagation delay: UVEN going
tD_OFF of VGATE, VOUT = VVCC, R(GATE-OUT) = 1 MΩ, 0.5 1
low to GATE output low µs
tFALL < 0.1 µs
VTIMER: 0 →5 V, tRISE < 0.1 µs. 50% of
Propagation delay: TIMER expires
tD_FAULT VTIMER to 50% of VGATE, VOUT = VCC , 0.8 1
to GATE output low R(GATE-OUT) = 1 MΩ,
Power Good Output (PG)
IPG = 2 mA 0.1 0.25
Low voltage (sinking) IPG = 4 mA 0.25 0.5
PG threshold voltage; VOUT rising; VSENSE = VVCC; measure V(VCC-OUT) 0.8 1.25 1.7
PG goes low V
PG threshold voltage; VOUT VSENSE = VVCC; measure V(VCC-OUT) 2.2 2.7 3.2
falling; PG goes open drain
PG threshold hysteresis voltage; VSENSE = VVCC 1.4
V(SENSE-OUT)
PG deglitch delay; detection to
tDPG VSENSE = VVCC 5 9 15 ms
output; rising and falling edges
ILEAKAGE Leakage current; PG false open drain 10 µA
Overvoltage Input (OV)
VOV_H OV rising 1.31 1.35 1.39 V
Threshold voltage Hysteresis 70 90 110 mV
ILEAKAGE Leakage current (sinking) VOV = 5 V 1 µA
tOFF Turn off time VOV = 0 →2.5 V to VGS < 1 V, CGATE = 2 nF 2
µs
Maximum duration of OV strong Gate pull down 40 100 220
pull down
Output Voltage Feedback (OUT)
VOUT = VVCC, VUVEN = Hi; sinking 8 20
IOUT Bias current µA
VOUT = GND; VUVEN = Lo; sourcing 18 40
Load Current Monitor (IMON) Output
Maximum output voltage VCC – VSENSE = 200 mV 2.6 2.8 3 V
ISOURCE Source current 1.9 mA
ISINK Sink current 60 µA
Gain (VIMON/V(VCC-SENSE)) 46 48 50 V/V
VOFFSET Offset voltage -50 -5 30 mV
Error relative to curve fit, 5 mV < (VCC –
Linearity(1) 0.3%
VSENSE )
Output Ripple(1) 8 mVPP
(1) These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's
product warranty.
4Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated
Product Folder Links: TPS2492 TPS2493