Scheda tecnica SI2312CDS di Vishay Siliconix

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Si2312CDS
www.vishay.com Vishay Siliconix
S10-0641-Rev. A, 22-Mar-10 1Document Number: 65900
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 20 V (D-S) MOSFET
Marking code: P5
FEATURES
• TrenchFET® power MOSFET
• 100% Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•DC/DC converters
• Load switch for portable
applications
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 125 °C/W
e. Based on TC = 25 °C
PRODUCT SUMMARY
VDS (V) 20
RDS(on) max. () at VGS = 4.5 V 0.0318
RDS(on) max. () at VGS = 2.5 V 0.0356
RDS(on) max. () at VGS = 1.8 V 0.0414
Qg typ. (nC) 8.8
ID (A) a, e 6
Configuration Single
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free and halogen-free Si2312CDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 20 V
Gate-source voltage VGS ± 8
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
6 a
A
TC = 70 °C 5.1
TA = 25 °C 5 b, c
TA = 70 °C 4 b, c
Pulsed drain current IDM 20
Continuous source-drain diode current TC = 25 °C IS
1.75
TA = 25 °C 1.04 b, c
Maximum power dissipation
TC = 25 °C
PD
2.1
W
TC = 70 °C 1.3
TA = 25 °C 1.25 b, c
TA = 70 °C 0.8 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t 5 s RthJA 80 100 °C/W
Maximum junction-to-foot (drain) Steady state RthJF 40 60
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Si2312CDS
www.vishay.com Vishay Siliconix
S10-0641-Rev. A, 22-Mar-10 2Document Number: 65900
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 20 - - V
VDS temperature coefficient VDS/TJID = 250 μA -25-
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ--2.6-
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.45 - 1 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 20 V, VGS = 0 V - - 1 μA
VDS = 20 V, VGS = 0 V, TJ = 70 °C - - 10
On-state drain current a ID(on) V
DS 5 V, VGS = 4.5 V 20 - - A
Drain-source on-state resistance a RDS(on)
VGS = 4.5 V, ID = 5 A - 0.0265 0.0318
VGS = 2.5 V, ID = 4.7 A - 0.0296 0.0356
VGS = 1.8 V, ID = 4.3 A - 0.0345 0.0414
Forward transconductance a gfs VDS = 10 V, ID = 5 A - 24 - S
Dynamic b
Input capacitance Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
- 865 -
pFOutput capacitance Coss - 105 -
Reverse transfer capacitance Crss -55-
Total gate charge Qg VDS = 10 V, VGS = 5 V, ID = 5 A -1218
nC
VDS = 10 V, VGS = 4.5 V, ID = 5 A
-8.814
Gate-source charge Qgs -1.1-
Gate-drain charge Qgd -0.7-
Gate resistance Rgf = 1 MHz 0.5 2.4 4.8
Turn-on delay time td(on)
VDD = 10 V, RL = 2.2
ID 4 A, VGEN = 4.5 V, Rg = 1
-816
ns
Rise time tr -1726
Turn-off delay time td(off) -3147
Fall time tf-816
Turn-on delay time td(on)
VDD = 10 V, RL = 2.2
ID 4 A, VGEN = 5 V, Rg = 1
-510
Rise time tr -1320
Turn-off delay time td(off) -2132
Fall time tf-612
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C - - 1.75 A
Pulse diode forward current ISM --20
Body diode voltage VSD IS = 4 A, VGS = 0 V - 0.75 1.2 V
Body diode reverse recovery time trr
IF = 4 A, di/dt = 100 A/μs,
TJ = 25 °C
-1220ns
Body diode reverse recovery charge Qrr -510nC
Reverse recovery fall time ta-7-
ns
Reverse recovery rise time tb-5-
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Si2312CDS
www.vishay.com Vishay Siliconix
S10-0641-Rev. A, 22-Mar-10 3Document Number: 65900
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0
VGS =5Vthru2V
VGS =1.5V
VGS =1V
VDS- Drain-to-Source Voltage (V)
- Drain Current (A)ID
0.020
0.025
0.030
0.035
0.040
0.045
0 5 10 15 20
VGS =1.8V
VGS =4.5V
VGS =2.5V
- On-Resistance (Ω)R DS(on)
ID- Drain Current (A)
0
1
2
3
4
5
0246810
VDS=16V
ID=5A
VDS=10V
VDS=5V
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
0
1
2
3
4
5
0.0 0.3 0.6 0.9 1.2 1.5
TC= 25 °C
TC=125 °C
TC= - 55 °C
VGS -Gate-to-Source Voltage (V)
- Drain Current (A)ID
Crss
0
300
600
900
1200
0 5 10 15 20
Ciss
Coss
VDS-Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.70
0.95
1.20
1.45
1.70
- 50 - 25 0 25 50 75 100 125 150
VGS = 2.5 V, I = 4.7 A
VGS =4.5V,I
D=5 A
TJ- Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
D
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Si2312CDS
www.vishay.com Vishay Siliconix
S10-0641-Rev. A, 22-Mar-10 4Document Number: 65900
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
TJ= 25 °C
TJ= 150 °C
VSD-Source-to-Drain Voltage (V)
- Source Current (A)I S
0.1
0.3
0.5
0.7
0.9
- 50 - 25 0 25 50 75 100 125 150
ID= 250 μA
(V)VGS(th)
TJ- Temperature (°C)
0
8
16
24
32
0.001 0.01 0.1 1 10 100
Time (s)
Power (W)
100
1
0.1 1 10 100
0.01
10
0.1
TA=25 °C
Single Pulse100 ms
Limited by RDS(on)*
BVDSS Limited
1ms
100 μs
10 ms
1s,10s
DC
VDS- Drain-to-Source Voltage (V)
*V
GS > minimum VGS at which RDS(on) isspecified
- Drain Current (A)
ID
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Si2312CDS
www.vishay.com Vishay Siliconix
S10-0641-Rev. A, 22-Mar-10 5Document Number: 65900
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
0.0
1.5
3.0
4.5
6.0
7.5
0 25 50 75 100 125 150
Package Limited
TC-Case Temperature (°C)
ID- Drain Current (A)
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
TC-Case Temperature (°C)
Power (W)
0.0
0.3
0.6
0.9
1.2
0 25 50 75 100 125 150
TA- Ambient Temperature (°C)
Power (W)
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Si2312CDS
www.vishay.com Vishay Siliconix
S10-0641-Rev. A, 22-Mar-10 6Document Number: 65900
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for
silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65900.
10-3 10-2 110 10 00010-1
10-4 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA = 125 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
1000
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.05 Single Pulse
0.02
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
— VISHAY.. mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} D, Rex men Number 72609 on 2er ca
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
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Revision: 01-Jan-2021 1Document Number: 91000
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