Scheda tecnica BAS,SBAS16L di onsemi

ON Semiconductor@ www.0nsemi.com o—K—a
© Semiconductor Components Industries, LLC, 1994
February, 2020 − Rev. 14
1Publication Order Number:
BAS16LT1/D
Switching Diode
BAS16L
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR100 V
Peak Forward Current IF200 mA
Non−Repetitive Peak Forward Surge
Current 60 Hz
IFSM(surge) 1.8 A
Repetitive Peak Forward Current
(Note 3)
IFRM 1.0 A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 s
IFSM
36.0
18.0
6.0
3.0
1.8
1.3
1.0
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
MARKING
DIAGRAM
1
2
3
BAS16LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
BAS16LT3G SOT−23
(Pb−Free)
10000/Tape & Reel
1
A6 M G
G
A6 = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAS16LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
SBAS16LT3G SOT−23
(Pb−Free)
10000/Tape & Reel
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|___ www.cnsemi.com
BAS16L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 V)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
IR
−
−
−
1.0
50
30
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR) 100 −Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
−
−
−
−
715
855
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD−2.0 pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR −1.75 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr −6.0 ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
QS−45 pC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 W
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS16L
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3
TYPICAL CHARACTERISTICS
0.1
VF, FORWARD VOLTAGE (V)
0.01
10
0
VR, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.62
0
VR, REVERSE VOLTAGE (V)
0.60
0.56
0.50
0.48
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
Figure 2. VF vs. IFFigure 3. IR vs. VR
Figure 4. Capacitance
IR, REVERSE CURRENT (μA)
0.1
1.0
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
85°C
55°C
150°C
125°C
25°C
-40°C
-55°C
60 70
-40°C
150°C
125°C
85°C
55°C
25°C
0.52
0.54
0.58
1357
85°C
Cap
Figure 5. Maximum Non−repetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
tp (mSec)
10.10.010.001
0
5
10
15
20
25
IFSM (A)
10
30
35
40
Based on square wave currents
TJ = 25°C prior to surge
0.0001 100 1000
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SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT−23 (TO−236)
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1
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