The BM60212FV-CE2 and BM60213FV-CE2 are dual-channel gate drivers designed for higher power applications. Internally, they use a coreless transformer which allows the high side to operate at up to 1200 V above the low side. The low side V_CCB input voltage is typically 10 to 24 V. The high-side supply (V_CCA) is typically developed using a charge pump, as shown here. The BM60212FV-CE2 includes a Miller clamp MOSFET which holds the gate tightly to the source when the part is off, in order to prevent conduction caused by the MOSFET Miller capacitance during fast V_DS voltage rise times. The parts include undervoltage lockout for both high and low side, and accept logic inputs of either 3.3 V or 5 V. These gate drivers have a separate pin for source and sink, which allows the customer to adjust rise and fall times independently. They also provide a guaranteed minimum gate current of 3 A source and sink. An evaluation board is also available.